RFD8P06LE

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminals :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Operating Temperature (Max) :

175°C

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

THROUGH-HOLE

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max (Abs) :

48W

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Number of Elements :

1

Surface Mount :

No

JEDEC-95 Code :

TO-251AA

JESD-609 Code :

e0

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.33Ohm

Terminal Position :

Single

Case Connection :

DRAIN

Polarity/Channel Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

8A

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSIP-T3