RFD8P06LE

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

Power Dissipation-Max (Abs) :

48W

Operating Temperature (Max) :

175°C

DS Breakdown Voltage-Min :

60V

JESD-609 Code :

e0

Drain Current-Max (Abs) (ID) :

8A

Drain-source On Resistance-Max :

0.33Ohm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Polarity/Channel Type :

P-Channel

JEDEC-95 Code :

TO-251AA

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

JESD-30 Code :

R-PSIP-T3

Case Connection :

DRAIN