RFD8P06ESM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.3Ohm

JEDEC-95 Code :

TO-252AA

Number of Terminals :

2

Factory Lead Time :

[object Object]

RoHS Status :

Non-RoHS Compliant

Power Dissipation Ambient-Max :

48W

Transistor Element Material :

SILICON

Turn On Time-Max (ton) :

70ns

Power Dissipation-Max (Abs) :

48W

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Operating Temperature (Max) :

175°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED, ESD PROTECTED

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

Reach Compliance Code :

not_compliant

Turn Off Time-Max (toff) :

100ns

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

8A

Number of Elements :

1

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single