RFD8P06ESM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Polarity/Channel Type :

P-Channel

Terminal Form :

Gull wing

Turn Off Time-Max (toff) :

100ns

Power Dissipation Ambient-Max :

48W

Turn On Time-Max (ton) :

70ns

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

8A

Factory Lead Time :

[object Object]

Transistor Element Material :

SILICON

Terminal Position :

Single

JEDEC-95 Code :

TO-252AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

48W

Terminal Finish :

Tin/Lead (Sn/Pb)

Surface Mount :

yes

Operating Temperature (Max) :

175°C

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Number of Terminals :

2

Additional Feature :

AVALANCHE RATED, ESD PROTECTED

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.3Ohm

Number of Elements :

1

Qualification Status :

Not Qualified