RFD8P06ESM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.3Ohm

Case Connection :

DRAIN

Terminal Form :

Gull wing

Factory Lead Time :

[object Object]

Polarity/Channel Type :

P-Channel

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Turn On Time-Max (ton) :

70ns

JEDEC-95 Code :

TO-252AA

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

48W

Number of Elements :

1

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Power Dissipation Ambient-Max :

48W

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Additional Feature :

AVALANCHE RATED, ESD PROTECTED

Qualification Status :

Not Qualified

Operating Temperature (Max) :

175°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

8A

Surface Mount :

yes

DS Breakdown Voltage-Min :

60V

Turn Off Time-Max (toff) :

100ns

Transistor Application :

SWITCHING