RFD8P06ESM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature (Max) :

175°C

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Number of Terminals :

2

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

ECCN Code :

EAR99

Terminal Position :

Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

48W

Terminal Finish :

Tin/Lead (Sn/Pb)

Qualification Status :

Not Qualified

Turn Off Time-Max (toff) :

100ns

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

JESD-609 Code :

e0

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

P-Channel

Power Dissipation Ambient-Max :

48W

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

8A

Turn On Time-Max (ton) :

70ns

Drain-source On Resistance-Max :

0.3Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

[object Object]

Additional Feature :

AVALANCHE RATED, ESD PROTECTED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED