RFD8P06E

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Additional Feature :

MEGAFET

Operating Temperature (Max) :

175°C

DS Breakdown Voltage-Min :

60V

Number of Terminals :

3

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

8A

Power Dissipation-Max (Abs) :

48W

Polarity/Channel Type :

P-Channel

Drain-source On Resistance-Max :

0.3Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-251AA