RF4G100BGTCR

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Mfr.Part #
RF4G100BGTCR
Manufacturer
ROHM Semiconductor
Package / Case
8-PowerUDFN
Datasheet
Download
Description
NCH 40V 10A, HUML2020L8, POWER M
Stock
2,790
In Stock :
2,790

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
6.5 ns
Package :
Digi-Reel?
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Operating Temperature :
150°C (TJ)
Subcategory :
MOSFETs
Supplier Device Package :
DFN2020-8S
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±20V
RoHS :
Details
Channel Mode :
Enhancement
Number of Channels :
1 Channel
FET Type :
N-Channel
Mounting Type :
Surface Mount
Mounting Style :
SMD/SMT
Product Status :
Active
Brand :
Rohm Semiconductor
Series :
-
FET Feature :
-
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Package Type :
HUML2020L8
Power Dissipation (Max) :
2W (Ta)
Package / Case :
8-PowerUDFN
Continuous Drain Current Id :
10A
Power Dissipation :
2W
Drain to Source Voltage (Vdss) :
40 V
Packaging :
Cut Tape
Product Category :
MOSFET
Manufacturer :
Rohm Semiconductor
Maximum Operating Temperature :
+ 150 C
Channel Type :
N Channel
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds :
530 pF @ 20 V
Qualification :
-
Rds On (Max) @ Id, Vgs :
14.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs :
10.6 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Datasheets
RF4G100BGTCR
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RF4G100BGTCR from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C (TJ), Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:8-PowerUDFN, RF4G100BGTCR pinout, RF4G100BGTCR datasheet PDF, RF4G100BGTCR amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RF4G100BGTCR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Cut Tape 14.2mOhm @ 10A, 10V ±20V 530 pF @ 20 V 10.6 nC @ 10 V 40 V 8-PowerUDFN

RF4G100BGTCR Overview


A device's maximal input capacitance is 530 pF @ 20 V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 40 V drain to source voltage (Vdss).

RF4G100BGTCR Features


a 40 V drain to source voltage (Vdss)


RF4G100BGTCR Applications


There are a lot of Rohm Semiconductor
RF4G100BGTCR applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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