RF4C100BCTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

16 Weeks

Drain Current-Max (Abs) (ID) :

10A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Vgs(th) (Max) @ Id :

1.2V @ 1mA

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

0.02Ohm

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerUDFN

Transistor Application :

SWITCHING

Power Dissipation-Max :

2W Ta

Rds On (Max) @ Id, Vgs :

15.6m Ω @ 10A, 4.5V

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Avalanche Energy Rating (Eas) :

15.2 mJ

Gate Charge (Qg) (Max) @ Vgs :

23.5nC @ 4.5V

JESD-30 Code :

S-PDSO-N6

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1660pF @ 10V

Surface Mount :

yes

FET Type :

P-Channel

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±8V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

36A

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V