RF4C100BCTCR

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Mfr.Part #
RF4C100BCTCR
Manufacturer
ROHM Semiconductor
Package / Case
8-PowerUDFN
Datasheet
Download
Description
MOSFET P-CH 20V 10A HUML2020L8
Stock
17,955
In Stock :
17,955

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
16 Weeks
Drain Current-Max (Abs) (ID) :
10A
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
NO LEAD
Vgs(th) (Max) @ Id :
1.2V @ 1mA
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
20V
Operating Temperature :
150°C TJ
Drain-source On Resistance-Max :
0.02Ohm
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
8-PowerUDFN
Transistor Application :
SWITCHING
Power Dissipation-Max :
2W Ta
Rds On (Max) @ Id, Vgs :
15.6m Ω @ 10A, 4.5V
Number of Terminations :
6
Current - Continuous Drain (Id) @ 25°C :
10A Ta
Avalanche Energy Rating (Eas) :
15.2 mJ
Gate Charge (Qg) (Max) @ Vgs :
23.5nC @ 4.5V
JESD-30 Code :
S-PDSO-N6
Terminal Position :
Dual
Input Capacitance (Ciss) (Max) @ Vds :
1660pF @ 10V
Surface Mount :
yes
FET Type :
P-Channel
Packaging :
Cut Tape (CT)
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±8V
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
36A
Number of Elements :
1
Drain to Source Voltage (Vdss) :
20V
Datasheets
RF4C100BCTCR
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RF4C100BCTCR from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:8-PowerUDFN, Number of Terminations:6, Mounting Type:Surface Mount, RF4C100BCTCR pinout, RF4C100BCTCR datasheet PDF, RF4C100BCTCR amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RF4C100BCTCR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RF4C100BCTCR


P-Channel Cut Tape (CT) 15.6m Ω @ 10A, 4.5V ±8V 1660pF @ 10V 23.5nC @ 4.5V 20V 8-PowerUDFN

RF4C100BCTCR Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 15.2 mJ.A device's maximum input capacitance is 1660pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 10A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 36A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

RF4C100BCTCR Features


the avalanche energy rating (Eas) is 15.2 mJ
based on its rated peak drain current 36A.
a 20V drain to source voltage (Vdss)


RF4C100BCTCR Applications


There are a lot of ROHM Semiconductor
RF4C100BCTCR applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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