RF1S40N10LE

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Power Dissipation Ambient-Max :

150W

DS Breakdown Voltage-Min :

100V

JEDEC-95 Code :

TO-262AA

Turn On Time-Max (ton) :

200ns

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Drain-source On Resistance-Max :

0.04Ohm

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

40A

Surface Mount :

No

Case Connection :

DRAIN

Power Dissipation-Max (Abs) :

150W

Turn Off Time-Max (toff) :

165ns

Number of Elements :

1

Number of Terminals :

3

RoHS Status :

Non-RoHS Compliant

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Operating Temperature (Max) :

175°C

JESD-609 Code :

e0

Additional Feature :

AVALANCHE RATED, ESD PROTECTED, LOGIC LEVEL COMPATIBLE