RF1S22N10

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

100W

JEDEC-95 Code :

TO-263AB

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Surface Mount :

yes

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Operating Temperature (Max) :

175°C

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Number of Elements :

1

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

50A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminals :

2

Drain Current-Max (Abs) (ID) :

22A

Terminal Form :

Gull wing

Terminal Finish :

Tin/Lead (Sn/Pb)

DS Breakdown Voltage-Min :

100V

Additional Feature :

MEGAFET

JESD-609 Code :

e0

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.08Ohm