RDX080N50FU6

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Mfr.Part #
RDX080N50FU6
Manufacturer
ROHM Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 8A TO220FM
Stock
28,087
In Stock :
28,087

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
920pF @ 25V
Factory Lead Time :
17 Weeks
Power Dissipation-Max :
40W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Rds On (Max) @ Id, Vgs :
850m Ω @ 4A, 10V
Power Dissipation :
40W
Pbfree Code :
yes
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 1mA
Continuous Drain Current (ID) :
8A
Drain to Source Breakdown Voltage :
500V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
8A Ta
Mount :
Through Hole
Packaging :
Bulk
Published :
2006
Datasheets
RDX080N50FU6
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RDX080N50FU6 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-220-3 Full Pack, RDX080N50FU6 pinout, RDX080N50FU6 datasheet PDF, RDX080N50FU6 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RDX080N50FU6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RDX080N50FU6


N-Channel Bulk 850m Ω @ 4A, 10V ±30V 920pF @ 25V 28nC @ 10V TO-220-3 Full Pack

RDX080N50FU6 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 920pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

RDX080N50FU6 Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage


RDX080N50FU6 Applications


There are a lot of ROHM Semiconductor
RDX080N50FU6 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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