RCX511N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Case Connection :

Isolated

Published :

2012

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

250V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

204A

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

250V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Drain-source On Resistance-Max :

0.065Ohm

Avalanche Energy Rating (Eas) :

197.9 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2.23W Ta 40W Tc

Packaging :

Bulk

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Continuous Drain Current (ID) :

51A

Rds On (Max) @ Id, Vgs :

65m Ω @ 25.5A, 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 1mA

HTS Code :

8541.29.00.95

JEDEC-95 Code :

TO-220AB