RCX081N20

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

FET Type :

N-Channel

Continuous Drain Current (ID) :

8A

Rds On (Max) @ Id, Vgs :

770m Ω @ 4A, 10V

Avalanche Energy Rating (Eas) :

5.17 mJ

Lead Free :

Lead Free

Power Dissipation-Max :

2.23W Ta 40W Tc

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Number of Terminations :

3

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Case Connection :

Isolated

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-220AB

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Pulsed Drain Current-Max (IDM) :

32A

DS Breakdown Voltage-Min :

200V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.77Ohm

Published :

2012

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

200V

Drain Current-Max (Abs) (ID) :

8A

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single