RCX080N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Number of Channels :

1

Avalanche Energy Rating (Eas) :

4.66 mJ

Rds On (Max) @ Id, Vgs :

600m Ω @ 4A, 10V

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Turn-Off Delay Time :

28 ns

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Drain-source On Resistance-Max :

0.6Ohm

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Packaging :

Bulk

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Rise Time :

28ns

Number of Elements :

1

Pin Count :

3

Turn On Delay Time :

22 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

8A

ECCN Code :

EAR99

Power Dissipation-Max :

2.23W Ta 35W Tc

Pulsed Drain Current-Max (IDM) :

32A

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Package / Case :

TO-220-3 Full Pack

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Terminations :

3

Fall Time (Typ) :

14 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

250V

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JESD-30 Code :

R-PSFM-T3