RCX050N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

1100m Ω @ 2.5A, 10V

Continuous Drain Current (ID) :

5A

Published :

2011

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

250V

Mount :

Through Hole

Power Dissipation-Max :

30W Tc

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

5A Ta

FET Type :

N-Channel

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Turn-Off Delay Time :

20 ns

Case Connection :

Isolated

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Packaging :

Bulk

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Rise Time :

18ns

Turn On Delay Time :

17 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

5A

Vgs (Max) :

±30V

Element Configuration :

Single

Fall Time (Typ) :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Pin Count :

3

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole