R8010ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Mount :

Through Hole

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

6.63 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

10A

Factory Lead Time :

10 Weeks

Mounting Type :

Through Hole

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.56Ohm

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Power Dissipation-Max :

40W Tc

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

40A

Rds On (Max) @ Id, Vgs :

560m Ω @ 5A, 10V

Case Connection :

Isolated

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

800V

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 25V

Transistor Application :

SWITCHING