R8010

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Mfr.Part #
R8010
Manufacturer
REED Instruments
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
LASER DISTANCE METER, 328'
Stock
2,467
In Stock :
2,467

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Manufacturer :
REED Instruments
Product Category :
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
800V
Operating Temperature :
150°C TJ
Power Dissipation-Max :
40W Tc
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Package / Case :
TO-220-3 Full Pack
Drain-source On Resistance-Max :
0.56Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Through Hole
Published :
2013
Input Capacitance (Ciss) (Max) @ Vds :
1750pF @ 25V
Rds On (Max) @ Id, Vgs :
560m Ω @ 5A, 10V
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Factory Lead Time :
10 Weeks
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 1mA
Case Connection :
Isolated
Drain to Source Voltage (Vdss) :
800V
Pulsed Drain Current-Max (IDM) :
40A
Packaging :
Bulk
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
6.63 mJ
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
10A
Datasheets
R8010
Introducing REED Instruments R8010 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Mounting Type:Through Hole, R8010 pinout, R8010 datasheet PDF, R8010 amp .Beyond REED Instruments R8010 ,we also offer F9TYP5E5EANF097, F9TYP5E5EANF098, F9TYP5E5EANF099, Our vast inventory has you covered. Contact us now for immediate solutions.

REED Instruments R8010


N-Channel Bulk 560m Ω @ 5A, 10V ±30V 1750pF @ 25V 62nC @ 10V 800V TO-220-3 Full Pack

R8010ANX Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 6.63 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1750pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).Peak drain current is 40A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

R8010ANX Features


the avalanche energy rating (Eas) is 6.63 mJ
a continuous drain current (ID) of 10A
based on its rated peak drain current 40A.
a 800V drain to source voltage (Vdss)


R8010ANX Applications


There are a lot of ROHM Semiconductor
R8010ANX applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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