R6046FNZC8
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- Mfr.Part #
- R6046FNZC8
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 46A TO3PF
- Stock
- 36,826
- In Stock ：
- 36,826
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Drain-source On Resistance-Max :
- 0.093Ohm
- Pulsed Drain Current-Max (IDM) :
- 115A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 80 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6100pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 46A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Case Connection :
- Isolated
- Package / Case :
- TO-3P-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 46A
- Power Dissipation-Max :
- 120W Tc
- Power Dissipation :
- 120W
- Published :
- 2011
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 230 ns
- Rds On (Max) @ Id, Vgs :
- 93m Ω @ 23A, 10V
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Rise Time :
- 150ns
- Capacitance :
- -3pF
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 142 mJ
- Lead Free :
- Lead Free
- Factory Lead Time :
- 10 Weeks
- Datasheets
- R6046FNZC8
N-Channel Tube 93m Ω @ 23A, 10V ±30V 6100pF @ 25V 150nC @ 10V TO-3P-3 Full Pack
R6046FNZC8 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 142 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 46A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [230 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 115A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
R6046FNZC8 Features
the avalanche energy rating (Eas) is 142 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 230 ns
based on its rated peak drain current 115A.
R6046FNZC8 Applications
There are a lot of ROHM Semiconductor
R6046FNZC8 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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