R6046ANZ1C9
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- Mfr.Part #
- R6046ANZ1C9
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 46A TO247
- Stock
- 2,562
- In Stock ：
- 2,562
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Drain-source On Resistance-Max :
- 0.09Ohm
- JESD-30 Code :
- R-PSFM-T3
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 46A
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 23A, 10V
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Packaging :
- Bulk
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Avalanche Energy Rating (Eas) :
- 142 mJ
- DS Breakdown Voltage-Min :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Power Dissipation-Max :
- 120W Tc
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 115A
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Mount :
- Through Hole
- Published :
- 2013
- Datasheets
- R6046ANZ1C9
N-Channel Bulk 90m Ω @ 23A, 10V ±30V 6000pF @ 25V 150nC @ 10V 600V TO-247-3
R6046ANZ1C9 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 142 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 46A amps.As far as peak drain current is concerned, its maximum pulsed current is 115A.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
R6046ANZ1C9 Features
the avalanche energy rating (Eas) is 142 mJ
a continuous drain current (ID) of 46A
based on its rated peak drain current 115A.
a 600V drain to source voltage (Vdss)
R6046ANZ1C9 Applications
There are a lot of ROHM Semiconductor
R6046ANZ1C9 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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