R6046ANZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Fall Time (Typ) :

100 ns

Turn-Off Delay Time :

230 ns

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Output Current :

500mA

Packaging :

Bulk

Continuous Drain Current (ID) :

46A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Factory Lead Time :

10 Weeks

Published :

2011

Number of Pins :

3

Number of Channels :

1

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fault Protection :

Over Temperature, Reverse Current

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

130ns

Current - Continuous Drain (Id) @ 25°C :

46A Ta

RoHS Status :

ROHS3 Compliant

Output Configuration :

High Side

Interface :

On/Off

Power Dissipation-Max :

120W Tc

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

81m Ω @ 23A, 10V

Case Connection :

Isolated

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-3P-3 Full Pack

Number of Elements :

1

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Turn On Delay Time :

60 ns

Mounting Type :

Through Hole