R6035KNZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Package Type :

TO-247

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 1mA

Polarity :

N

Mounting Style :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rad Hardened :

No

Maximum Operating Temperature :

+ 150 C

Subcategory :

MOSFETs

Operating Temperature :

150°C (TJ)

Brand :

Rohm Semiconductor

Vgs (Max) :

±20V

Series :

-

FET Feature :

-

Power Dissipation :

379(W)

Operating Temperature Classification :

Military

Gate-Source Voltage (Max) :

±20(V)

Product Type :

MOSFET

Product Status :

Active

Supplier Device Package :

TO-247

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3000 pF @ 25 V

Packaging :

Rail/Tube

RoHS :

Details

Manufacturer :

Rohm Semiconductor

Rise Time :

150 ns

Base Product Number :

R6035

Pin Count :

3 +Tab

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Product Category :

MOSFET

Drain-Source On-Volt :

600(V)

Continuous Drain Current :

35(A)

Drain to Source Voltage (Vdss) :

600 V

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

72 nC @ 10 V

Operating Temp Range :

-55C to 150C

Number of Elements :

1

Power Dissipation (Max) :

379W (Tc)

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

102mOhm @ 18.1A, 10V

Package :

Tube

Mounting :

Through Hole

Number of Channels :

1 Channel

Type :

Power MOSFET