R6035ENZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

35A Tc

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

796 mJ

Packaging :

Tube

Mounting Type :

Through Hole

Published :

2014

Mount :

Through Hole

Power Dissipation-Max :

120W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.102Ohm

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-3P-3 Full Pack

Threshold Voltage :

4V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

105A

Transistor Application :

SWITCHING

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

35A

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

102m Ω @ 18.1A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2720pF @ 25V