R6030KNZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 25V

Lead Free :

Lead Free

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

Package / Case :

TO-3P-3 Full Pack

Published :

2015

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

86W Tc

Pulsed Drain Current-Max (IDM) :

90A

Case Connection :

Isolated

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Continuous Drain Current (ID) :

30A

Factory Lead Time :

15 Weeks

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

DS Breakdown Voltage-Min :

600V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

130m Ω @ 14.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Transistor Application :

SWITCHING