R6030KNXC7

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 1mA

Rds On (Max) @ Id, Vgs :

130m Ω @ 14.5A, 10V

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

636 mJ

Current - Continuous Drain (Id) @ 25°C :

30A Tc

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Surface Mount :

No

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.13Ohm

Operating Temperature :

-55°C~150°C TJ

Published :

2015

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

86W Tc

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

30A

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 25V

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)