R6030ENZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Power Dissipation-Max :

305W Tc

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

30A

Avalanche Energy Rating (Eas) :

636 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

80A

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

8 Weeks

Drain-source On Resistance-Max :

0.13Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

130m Ω @ 14.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 25V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-247-3