R6020KNZ1C9

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

196m Ω @ 9.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Pulsed Drain Current-Max (IDM) :

60A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.196Ohm

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Terminations :

3

Factory Lead Time :

13 Weeks

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

20A

Power Dissipation-Max :

231W Tc

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Number of Elements :

1

Avalanche Energy Rating (Eas) :

418 mJ

ECCN Code :

EAR99

Package / Case :

TO-247-3

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)