R6009KNXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

48W

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

16.5 nC @ 10 V

Power Dissipation (Max) :

48W (Tc)

Channel Type :

N Channel

Mounting Style :

Through Hole

Product Category :

MOSFET

Package / Case :

TO-220-3 Full Pack

Minimum Operating Temperature :

- 55 C

Operating Temperature :

150°C (TJ)

Drain to Source Voltage (Vdss) :

600 V

Input Capacitance (Ciss) (Max) @ Vds :

540 pF @ 25 V

Configuration :

Single

Package :

Tube

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Brand :

Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C :

9A (Ta)

Rds On (Max) @ Id, Vgs :

535mOhm @ 2.8A, 10V

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

5V @ 1mA

Qualification :

-

Subcategory :

MOSFETs

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Continuous Drain Current Id :

9A

Product Status :

Active

RoHS :

Details

FET Feature :

-

FET Type :

N-Channel

Vgs (Max) :

±20V

Supplier Device Package :

TO-220FM

Number of Channels :

1 Channel

Packaging :

Tube

Rise Time :

33 ns

Transistor Type :

Power MOSFET

Mounting Type :

Through Hole

MSL :

MSL 1 - Unlimited

Manufacturer :

Rohm Semiconductor