R6009KNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

535m Ω @ 2.8A, 10V

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Elements :

1

Factory Lead Time :

18 Weeks

Number of Terminations :

3

Packaging :

Bulk

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Power Dissipation-Max :

48W Tc

Package / Case :

TO-220-3 Full Pack

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

9A

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

600V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Published :

2015

Continuous Drain Current (ID) :

9A

FET Type :

N-Channel

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Pulsed Drain Current-Max (IDM) :

27A