R6009KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

20 Weeks

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

535m Ω @ 2.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Terminal Position :

Single

Number of Elements :

1

Packaging :

Cut Tape (CT)

Avalanche Energy Rating (Eas) :

153 mJ

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

27A

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

9A Tc

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

600V

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

5V @ 1mA

Transistor Application :

SWITCHING

Power Dissipation-Max :

94W Tc

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.535Ohm

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

9A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED