R6009JNJGTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

177 mJ

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

9A

Number of Terminations :

2

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

645pF @ 100V

Surface Mount :

yes

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.585Ohm

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

125W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

15V

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

585m Ω @ 4.5A, 15V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

7V @ 1.38mA

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

27A

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 15V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

9A Tc