R6008ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Transistor Element Material :

SILICON

Fall Time (Typ) :

35 ns

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Power Dissipation :

50W

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

25 ns

Drain-source On Resistance-Max :

0.8Ohm

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

8A

Pin Count :

3

Element Configuration :

Single

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

800m Ω @ 4A, 10V

Radiation Hardening :

No

Packaging :

Bulk

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

600V

Avalanche Energy Rating (Eas) :

4.3 mJ

Pulsed Drain Current-Max (IDM) :

32A

Mount :

Through Hole

Rise Time :

25ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Mounting Type :

Through Hole

Published :

2012

Number of Elements :

1

Power Dissipation-Max :

50W Tc

Time@Peak Reflow Temperature-Max (s) :

10

Turn-Off Delay Time :

60 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free