R6007KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

7A

Rds On (Max) @ Id, Vgs :

620m Ω @ 2.4A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Mounting Type :

Surface Mount

Power Dissipation-Max :

78W Tc

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

21A

Drain-source On Resistance-Max :

0.62Ohm

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Number of Pins :

3

Drain to Source Voltage (Vdss) :

600V

Threshold Voltage :

5V

Factory Lead Time :

20 Weeks

Continuous Drain Current (ID) :

7A

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Transistor Element Material :

SILICON

Number of Terminations :

2

Terminal Position :

Single

Case Connection :

DRAIN

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

ECCN Code :

EAR99

Number of Elements :

1

RoHS Status :

ROHS3 Compliant