R6007END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Power Dissipation-Max :

78W Tc

Drain-source On Resistance-Max :

0.62Ohm

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

620m Ω @ 2.4A, 10V

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7A Tc

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

14A

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Terminal Position :

Single

Number of Elements :

1

Surface Mount :

yes

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

133 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

7A

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel