R6006KNXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

830mOhm @ 3A, 10V

Vgs (Max) :

±20V

Subcategory :

MOSFETs

Channel Type :

N Channel

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 25 V

Channel Mode :

Enhancement

FET Feature :

-

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Power Dissipation :

40W

Mounting Type :

Through Hole

RoHS :

Details

Brand :

Rohm Semiconductor

Number of Channels :

1 Channel

FET Type :

N-Channel

Series :

-

Rise Time :

22 ns

Package / Case :

TO-220-3 Full Pack

Transistor Type :

Power MOSFET

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Continuous Drain Current Id :

6A

Maximum Operating Temperature :

+ 150 C

Qualification :

-

Drain to Source Voltage (Vdss) :

600 V

Product Category :

MOSFET

Package :

Tube

Power Dissipation (Max) :

40W (Tc)

Operating Temperature :

150°C (TJ)

Manufacturer :

Rohm Semiconductor

Product Status :

Active

Mounting Style :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

6A (Ta)

MSL :

MSL 1 - Unlimited

Packaging :

Tube

Supplier Device Package :

TO-220FM

Product Type :

MOSFET

Transistor Polarity :

N-Channel