R6006JNXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.936Ohm

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

936m Ω @ 3A, 15V

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-2 Full Pack

Case Connection :

Isolated

DS Breakdown Voltage-Min :

600V

Drive Voltage (Max Rds On,Min Rds On) :

15V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 15V

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 100V

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

117 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

7V @ 800μA

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

18A

Power Dissipation-Max :

43W Tc

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

6A

Transistor Element Material :

SILICON

Vgs (Max) :

±30V