R6006JND3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Form :

Gull wing

Terminal Position :

Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 15V

Rds On (Max) @ Id, Vgs :

936m Ω @ 3A, 15V

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Surface Mount :

yes

Vgs(th) (Max) @ Id :

7V @ 800μA

Avalanche Energy Rating (Eas) :

117 mJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

18A

Transistor Application :

SWITCHING

Power Dissipation-Max :

86W Tc

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 100V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.936Ohm

Drive Voltage (Max Rds On,Min Rds On) :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

6A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2