R6006ANDTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

460pF

Rise Time :

36ns

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

6A

Number of Pins :

3

Rds On Max :

1.2 Ω

Mount :

Surface Mount

Number of Elements :

1

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

22 ns

Published :

2013

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Resistance :

900mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Turn-Off Delay Time :

50 ns

Continuous Drain Current (ID) :

6A

Max Power Dissipation :

40W

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

24A

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

2

Number of Channels :

1

Fall Time (Typ) :

35 ns

Radiation Hardening :

No

Package / Case :

TO-252-3

Max Operating Temperature :

150°C

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

17 Weeks

Avalanche Energy Rating (Eas) :

2.4 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR