R6004KNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Published :

2016

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

980m Ω @ 1.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

10.2nC @ 10V

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

12A

Drain Current-Max (Abs) (ID) :

4A

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.98Ohm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

FET Type :

N-Channel

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

46 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power Dissipation-Max :

40W Tc

Terminal Position :

Single

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE