R6004JNXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

15V

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 100V

Case Connection :

Isolated

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 15V

Drain Current-Max (Abs) (ID) :

4A

Number of Terminations :

3

Transistor Element Material :

SILICON

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

12A

Vgs(th) (Max) @ Id :

7V @ 450μA

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

52 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

35W Tc

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

18 Weeks

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Mounting Type :

Through Hole

Terminal Position :

Single

Additional Feature :

LOW ON-RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

1.43 Ω @ 2A, 15V

JESD-30 Code :

R-PSFM-T3