R6004JND3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.43 Ω @ 2A, 15V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

7V @ 450μA

Power Dissipation-Max :

60W Tc

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

12A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

4A

Vgs (Max) :

±30V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Surface Mount :

yes

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

52 mJ

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

not_compliant