R6004END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

46 mJ

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

59W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Vgs (Max) :

±20V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

8A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

FET Type :

N-Channel

Number of Terminations :

2

Terminal Position :

Single

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.98Ohm

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

980m Ω @ 1.5A, 10V

Operating Mode :

ENHANCEMENT MODE