R5021ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

210m Ω @ 10.5A, 10V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Drain-source On Resistance-Max :

0.21Ohm

Transistor Application :

SWITCHING

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

29.6 mJ

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

500V

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Continuous Drain Current (ID) :

21A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Bulk

Published :

2012

Pbfree Code :

yes

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

50W Tc

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

84A

Vgs (Max) :

±30V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

500V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Terminal Position :

Single

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V