R5016ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

50W Tc

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

500V

Number of Pins :

3

Rise Time :

50ns

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Packaging :

Bulk

Vgs (Max) :

±30V

Mount :

Through Hole

Pin Count :

3

Transistor Element Material :

SILICON

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

40 ns

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.27Ohm

Transistor Application :

SWITCHING

Terminal Position :

Single

Turn-Off Delay Time :

150 ns

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Fall Time (Typ) :

55 ns

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

64A

Rds On (Max) @ Id, Vgs :

270m Ω @ 8A, 10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2008

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

16A