R5011FNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

83

Vgs(th) (Max) @ Id :

4V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

500V

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Factory Lead Time :

10 Weeks

Terminal Position :

Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

520m Ω @ 5.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

50W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

11A Tc

DS Breakdown Voltage-Min :

500V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Avalanche Energy Rating (Eas) :

8.1 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Number of Terminations :

2

Published :

2015

Continuous Drain Current (ID) :

11A

Number of Elements :

1

Drain-source On Resistance-Max :

0.52Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

44A

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V