R5009FNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

17 Weeks

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2015

Number of Pins :

83

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

9A

Drain-source On Resistance-Max :

0.84Ohm

Transistor Element Material :

SILICON

Number of Terminations :

2

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

36A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

50W Tc

Number of Elements :

1

DS Breakdown Voltage-Min :

500V

Rds On (Max) @ Id, Vgs :

840m Ω @ 4.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

500V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Avalanche Energy Rating (Eas) :

5.4 mJ

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

9A

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V