R5009ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

5.4 mJ

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Number of Pins :

3

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.72Ohm

Turn-Off Delay Time :

62 ns

Number of Elements :

1

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Number of Terminations :

3

Turn On Delay Time :

30 ns

Power Dissipation-Max :

50W Tc

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Rds On (Max) @ Id, Vgs :

720m Ω @ 4.5A, 10V

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Width :

4.8mm

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Drain Current-Max (Abs) (ID) :

9A

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

9A

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.3mm

Published :

2010

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Height :

15.4mm

Package / Case :

TO-220-3 Full Pack