R5007ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Qualification Status :

Not Qualified

Mount :

Through Hole

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Pbfree Code :

yes

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

7A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

10

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

7A

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

40W Tc

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

3.5 mJ

JEDEC-95 Code :

TO-220AB

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

28A

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.5A, 10V

DS Breakdown Voltage-Min :

500V

Transistor Application :

SWITCHING