R5005CNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

5A

Mounting Type :

Surface Mount

FET Type :

N-Channel

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.5A, 10V

Rise Time :

25ns

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

5A

Power Dissipation-Max :

40W Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

20A

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Channels :

1

Turn On Delay Time :

20 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2005

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

500V

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 10V

Number of Pins :

3

Radiation Hardening :

No

Fall Time (Typ) :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 25V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

40 ns