R4008ANDTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

4.3 mJ

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

400V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

6 Weeks

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Copper (Sn98Cu2)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2011

Mount :

Surface Mount

Number of Terminations :

2

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

20W Tc

Continuous Drain Current (ID) :

8A

Number of Elements :

1

Drain to Source Voltage (Vdss) :

400V

Rds On (Max) @ Id, Vgs :

950m Ω @ 4A, 10V

Drain Current-Max (Abs) (ID) :

8A

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.95Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED