QS8M31TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.5V @ 1mA, 3V @ 1mA

Rds On (Max) @ Id, Vgs :

112m Ω @ 3A, 10V, 210m Ω @ 2A, 10V

Surface Mount :

yes

Transistor Application :

SWITCHING

Power - Max :

1.1W Ta

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.137Ohm

Number of Terminations :

8

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-F8

Drain Current-Max (Abs) (ID) :

3A

Current - Continuous Drain (Id) @ 25°C :

3A Ta 2A Ta

Input Capacitance (Ciss) (Max) @ Vds :

270pF 750pF @ 10V

Number of Elements :

2

Package / Case :

8-SMD, Flat Lead

Pulsed Drain Current-Max (IDM) :

6A

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

4nC, 7.2nC @ 5V

DS Breakdown Voltage-Min :

60V

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

FET Type :

N and P-Channel

FET Feature :

Standard

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Avalanche Energy Rating (Eas) :

1.4 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED