QS8M31TR
- Mfr.Part #
- QS8M31TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- QS8M31 IS COMPLEX TYPE MOSFET(P+
- Stock
- 2,938
- In Stock :
- 2,938
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- ECCN Code :
- EAR99
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.137Ohm
- Drain Current-Max (Abs) (ID) :
- 3A
- FET Type :
- N and P-Channel
- JESD-30 Code :
- R-PDSO-F8
- Packaging :
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF 750pF @ 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- Factory Lead Time :
- 16 Weeks
- Terminal Position :
- Dual
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 8
- Drain to Source Voltage (Vdss) :
- 60V
- Package / Case :
- 8-SMD, Flat Lead
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta 2A Ta
- FET Feature :
- Standard
- Mounting Type :
- Surface Mount
- Power - Max :
- 1.1W Ta
- Pulsed Drain Current-Max (IDM) :
- 6A
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC, 7.2nC @ 5V
- Avalanche Energy Rating (Eas) :
- 1.4 mJ
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Rds On (Max) @ Id, Vgs :
- 112m Ω @ 3A, 10V, 210m Ω @ 2A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA, 3V @ 1mA
- DS Breakdown Voltage-Min :
- 60V
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Datasheets
- QS8M31TR
QS8M31TR Documents

QS8M31TR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at
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