QS8M13TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Published :

2011

Radiation Hardening :

No

Rise Time :

40ns

Number of Pins :

8

Pbfree Code :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 5V

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

5A

Drain Current-Max (Abs) (ID) :

6A

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.039Ohm

Factory Lead Time :

52 Weeks

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

6A 5A

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Package / Case :

8-SMD, Flat Lead

Number of Elements :

2

Terminal Finish :

TIN COPPER

Transistor Application :

SWITCHING

Terminal Position :

Dual

Max Power Dissipation :

1.5W

JESD-609 Code :

e2

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 10V

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

Base Part Number :

*M13

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE