PZTA96ST1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Element Configuration :

Single

Length :

6.7mm

Max Power Dissipation :

1.5W

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Width :

3.7mm

Package / Case :

TO-261-4, TO-261AA

Power Dissipation :

1.5W

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

2005

Number of Elements :

1

Base Part Number :

PZTA96

Radiation Hardening :

No

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

450V

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

PNP

Max Breakdown Voltage :

450V

Collector Base Voltage (VCBO) :

450V

Number of Pins :

4

Height :

1.65mm

Collector Emitter Saturation Voltage :

-600mV

Surface Mount :

yes

Pin Count :

4

Number of Terminations :

4

Max Collector Current :

500mA

Contact Plating :

Tin

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

450V

Weight :

4.535924g

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

50

Mounting Type :

Surface Mount

Factory Lead Time :

2 Weeks

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

600mV @ 2mA, 20mA

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260