PZTA56

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

4

Collector Base Voltage (VCBO) :

-80V

Collector Emitter Breakdown Voltage :

80V

Number of Pins :

3

Power Dissipation :

1W

Weight :

188mg

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

-4V

Gain Bandwidth Product :

50MHz

Terminal Form :

Gull wing

Base Part Number :

PZTA56

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Frequency :

50MHz

Height :

1.7mm

Contact Plating :

Tin

Max Breakdown Voltage :

80V

Current - Collector Cutoff (Max) :

100nA

Vce Saturation (Max) @ Ib, Ic :

200mV @ 10mA, 100mA

Max Power Dissipation :

1W

Transition Frequency :

50MHz

Max Collector Current :

500mA

Package / Case :

TO-261-4, TO-261AA

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Terminal Position :

Dual

Voltage - Rated DC :

-80V

Collector Emitter Saturation Voltage :

-200mV

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Pbfree Code :

yes

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Length :

6.7mm

Element Configuration :

Single

Published :

2006

JESD-30 Code :

R-PDSO-G4

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

80V

Current Rating :

-500mA

hFE Min :

100

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Mount :

Surface Mount

Radiation Hardening :

No

Width :

3.7mm